| ID | 34128 |
| フルテキストURL | |
| 著者 |
Nagano, Takayuki
Department of Chemistry, Okayama University
Kuwahara, Eiji
Department of Chemistry, Okayama University
Fujiwara, Akihiko
CREST, Japan Science and Technology Agency
|
| 抄録 | A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally-on type FET properties, where non-zero current was observed at gate-source voltage of 0 VGS, of 0V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current.Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap ≈0.3 eV. The field-effect mobility for this FET was 1.5 x 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices. |
| キーワード | Field effect transistors
|
| 備考 | Document Objects Identifier:10.1016/j.cplett.2005.05.019
Published with permission from the copyright holder. This is the author's copy of the work, as published in Chemical Physics Letters, 30 June 2005, Volume 409, Issues 4-6, Pages 187-191. Publisher URL: http://dx.doi.org/10.1016/j.cplett.2005.05.019 Copyright 2005 Elsevier B.V. All rights reserved. |
| 発行日 | 2005-06-30
|
| 出版物タイトル |
Chemical Physics Letters
|
| 巻 | 409巻
|
| 号 | 4-6号
|
| 出版者 | Elsevier Science B.V.
|
| 開始ページ | 187
|
| 終了ページ | 191
|
| ISSN | 0009-2614
|
| NCID | AA00602122
|
| 資料タイプ |
学術雑誌論文
|
| 言語 |
英語
|
| 著作権者 | Elsevier B.V.
|
| 論文のバージョン | author
|
| 査読 |
有り
|
| DOI | |
| Web of Science KeyUT | |
| Submission Path | physics_general/6
|
