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ID 71109
著者
Ichinose, Rikuto Department of Physics and Electronics, Osaka Metropolitan University
Yamasaki, Shoei Department of Physics and Electronics, Osaka Metropolitan University
Ishihara, Ayumi Department of Environmental, Life, and Natural Sciences, Okayama University
Kanemaru, Yuta Department of Physics and Electronics, Osaka Metropolitan University
Asano, Takashi Department of Electronic Science and Engineering, Kyoto University
Noda, Susumu Department of Electronic Science and Engineering, Kyoto University
Takahashi, Yasushi Department of Environmental, Life, and Natural Sciences, Okayama University
抄録
We demonstrated a Raman silicon nanocavity laser that enables wavelength conversion from the S-band to the L-band. Compared with Raman lasers operating from the E-band to the C-band, a degradation in lasing threshold was observed.
備考
This is an Accepted Manuscript of an article published by Optica Publishing Group.
This fulltext file will be available in May 2027.
発行日
2026
出版物タイトル
CLEO 2026
出版者
Optica Publishing Group
開始ページ
FM4B.2
ISBN
9781957171586
資料タイプ
会議発表論文
関連URL
isVersionOf https://doi.org/10.1364/cleo_fs.2026.fm4b.2
言語
英語
OAI-PMH Set
岡山大学
著作権者
© 2026 The Author(s)
論文のバージョン
author
DOI