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ID 67511
フルテキストURL
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著者
Htun, Thiri Graduate School of Natural Science and Technology, Okayama University
Elattar, Amr Department of Chemistry, Faculty of Science, Ain Shams University
Elbohy, Hytham Physics Department, Faculty of Science, Damietta University
Tsutsumi, Kosei Graduate School of Natural Science and Technology, Okayama University
Horigane, Kazumasa Research Institute for Interdisciplinary Science, Okayama University
Nakano, Chiyu Advanced Science Research Center, Okayama University
Gu, Xiaoyu Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting and Department of Electronic & Electrical Engineering, Southern University of Science and Technology
Suzuki, Hiroo Graduate School of Natural Science and Technology, Okayama University
Nishikawa, Takeshi Graduate School of Natural Science and Technology, Okayama University Kaken ID publons researchmap
Kyaw, Aung Ko Ko Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting and Department of Electronic & Electrical Engineering, Southern University of Science and Technology
Hayashi, Yasuhiko Graduate School of Natural Science and Technology, Okayama University ORCID Kaken ID researchmap
抄録
Perovskite based on cesium bismuth bromide offers a compelling, non-toxic alternative to lead-containing counterparts in optoelectronic applications. However, its widespread usage is hindered by its wide bandgap. This study investigates a significant bandgap tunability achieved by introducing Fe doping into the inorganic, lead-free, non-toxic, and stable Cs3Bi2Br9 perovskite at varying concentrations. The materials were synthesized using a facile method, with the aim of tuning the optoelectronic properties of the perovskite materials. Characterization through techniques such as X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, energy dispersive spectroscopy (EDS), and UV-vis spectroscopy was conducted to elucidate the transformation mechanism of the doping materials. The substitution process results in a significant change in the bandgap energy, transforming from the pristine Cs3Bi2Br9 with a bandgap of 2.54 eV to 1.78 eV upon 70% Fe doping. The addition of 50% Fe in Cs3Bi2Br9 leads to the formation of the orthorhombic structure in Cs2(Bi,Fe)Br5 perovskite, while complete Fe alloying at 100% results in the phase formation of CsFeBr4 perovskite. Our findings on regulation of bandgap energy and crystal structure through B site substitution hold significant promise for applications in optoelectronics.
発行日
2024-07-23
出版物タイトル
RSC Advances
14巻
32号
出版者
Royal Society of Chemistry
開始ページ
23177
終了ページ
23183
ISSN
2046-2069
資料タイプ
学術雑誌論文
言語
英語
OAI-PMH Set
岡山大学
著作権者
© 2024 The Author(s).
論文のバージョン
publisher
PubMed ID
DOI
Web of Science KeyUT
関連URL
isVersionOf https://doi.org/10.1039/d4ra04062g
ライセンス
https://creativecommons.org/licenses/by-nc/3.0/
助成機関名
Ministry of Education, Culture, Sports, Science and Technology