フルテキストURL fulltext.pdf
著者 Tamura, Katsunori| Kunoh, Tatsuki| Nakanishi, Makoto| Kusano, Yoshihiro| Takada, Jun|
発行日 2020-10-16
出版物タイトル ACS Omega
5巻
42号
出版者 American Chemical Society
開始ページ 27287
終了ページ 27294
ISSN 2470-1343
資料タイプ 学術雑誌論文
言語 English
OAI-PMH Set 岡山大学
著作権者 © 2020 American Chemical Society
論文のバージョン publisher
PubMed ID 33134691
DOI 10.1021/acsomega.0c03574
Web of Science KeyUT 000586784200036
関連URL isVersionOf https://doi.org/10.1021/acsomega.0c03574
著者 Manchur, Mohammed Abul| Kikumoto, Mei| Kanao, Tadayoshi| Takada, Jun| Kamimura, Kazuo|
発行日 2011-05
出版物タイトル Extemophiles
15巻
3号
資料タイプ 学術雑誌論文
JaLCDOI 10.18926/15486
フルテキストURL Mem_Fac_Eng_OU_25_1_23.pdf
著者 三浦 嘉也| 高田 潤| 尾坂 明義| 河村 利夫|
抄録 Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron micrograph (SEM). XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and inlet position of oxygen gas effect the c-axis orientation, the growth rate and the microstructure of the films. Optimum conditions for a dense film with a fine texture of the surface and having good crystallinity were as follows: the substrate temperature;400℃, the evaporation rate;5.0(A)/s, the oxygen pressure;2.0x10(-4) Torr, the r.f. power;150 to 200W, and the oxygen gas inlet near the substrate. For the film prepared under the optimum conditions, the standard deviation σ of the rocking curve for the (002) diffraction was 1.9deg, smaller than that of the film prepared by using an r.f. sputtering method.
出版物タイトル Memoirs of the Faculty of Engineering, Okayama University
発行日 1990-12-14
25巻
1号
開始ページ 23
終了ページ 35
ISSN 0475-0071
言語 English
論文のバージョン publisher
NAID 120002307600
JaLCDOI 10.18926/15474
フルテキストURL Mem_Fac_Eng_OU_24_1_53.pdf
著者 尾坂 明義| Takao Seiji| 小田 喜一| 高田 潤| 三浦 嘉也|
抄録 Electrical resistance and X-ray photoelectron depth profile analysis are studied for antimony doped tin oxide films developed on silica, alkali-free and sodalime slide glass substrates. The sodium ions diffused from the substrates to the films prevented the crystal growth of rutile type tin oxide in the film, resulting in the high electrical resistance. A diffusion layer has been detected for each film with diffuse profiles of multi valent cations (Sn, Si or Ca) at the interface of the tin oxide film and substrate. A greater amount of sodium atoms have been detected in the film developed on the soda-lime glass while almost no sodium atoms have been found in those on the other substrates. This can be explained by the diffusion of the sodium ions in the substrate due to a drastic hydronium-sodium exchange mechanism under highly acidic conditions during the dipping and drying processes.
出版物タイトル Memoirs of the Faculty of Engineering, Okayama University
発行日 1989-11-29
24巻
1号
開始ページ 53
終了ページ 61
ISSN 0475-0071
言語 English
論文のバージョン publisher
NAID 120002307279
JaLCDOI 10.18926/15473
フルテキストURL Mem_Fac_Eng_OU_26_2_61.pdf
著者 Osaka, Akiyoshi| Kawabata Kouji| Nanba, Tokuro| Takada, Jun| Miura, Yoshinari|
抄録 Mullite-dispersed silica ceramics were prepared through sol-gel processing by the use of tetraethoxy silane, aluminium nitrate and aluminium isopropoxide as the Si and Al sources where HCl and HN0(3) were the catalyst. Effect of the starting materials, solvents and catalysts was examined on the gelation time or temperature of mullite precipitation. Apparent activation energy of gelation ranged from 80 to 95kJ/mol. The presence of AI in the sols elongated the gelling time suggesting the formation of chelate bonds between AI and Si-OR or Si-OH bonds.
出版物タイトル Memoirs of the Faculty of Engineering, Okayama University
発行日 1992-03-28
26巻
2号
開始ページ 61
終了ページ 67
ISSN 0475-0071
言語 English
論文のバージョン publisher
NAID 120002307416
JaLCDOI 10.18926/15436
フルテキストURL Mem_Fac_Eng_OU_26_2_69.pdf
著者 Fujii, Tatsuo| Sakata Naoki| Nanba, Tokuro| Osaka, Akiyoshi| Miura, Yoshinari| Takada, Jun|
抄録 (001)-oriented Ti(2)O(3) films were epitaxially grown on a(001)-face of sapphire single-crystalline substrate by an activated reactive evaporation method. The formation ranges of stoichiometric and nonstoichiometric Ti(2)O(3) films were determined as a function of the substrate temperature (Ts), the oxygen pressure (Po(2)) and the deposition rate. Stoichiometric Ti(2)O(3) films were grown at Ts≧673K under Po(2)≧1.0×10(-4)Torr, which showed the metal-insulator transition with a sharp change in electrical resistivity from 3.5×10(-2) to 2.6×10(-3)Ωcm at 361K. Nonstoichiometric films prepared under less oxidized conditions did not exhibit the transition. The nonstoichiometry of the Ti(2)O(3)films was discussed in terms of excess Ti ions.
出版物タイトル Memoirs of the Faculty of Engineering, Okayama University
発行日 1992-03-28
26巻
2号
開始ページ 69
終了ページ 75
ISSN 0475-0071
言語 English
論文のバージョン publisher
NAID 120002307639
JaLCDOI 10.18926/14088
フルテキストURL Mem_Fac_Eng_OU_41_1_93.pdf
著者 Tarequl Islam Bhuiyan| 中西 真| 藤井 達生| 高田 潤|
抄録 Co-precipitation method has been employed to fabricate neodymium substituted hematite with different compositions from the aqueous solution of their corresponding metal salts. Thermal analysis and X-ray diffraction studies revealed the coexistence of Fe(2)O(3) and Nd(2)O(3) phases up to 1050℃ and formation of solid solution phase among them at 1100℃ and above temperatures, which was evidenced by shifting of the XRD peaks. Unit cell parameters and the cell volumes of the samples were found to increase by adding Nd(3+) ions in the reaction process. FESEM studies showed the suppression of particle growth due to the presence of Nd(3+) ions. Spectroscopic measurement evidenced that neodymium substituted hematite exhibited brighter yellowish red color tone than that of pure α-Fe(2)O(3).
出版物タイトル Memoirs of the Faculty of Engineering, Okayama University
発行日 2007-01
41巻
1号
開始ページ 93
終了ページ 98
ISSN 0475-0071
言語 English
論文のバージョン publisher
NAID 120002308163
JaLCDOI 10.18926/fest/11614
タイトル(別表記) Preparation and Properties of ZnO Transparent Conductive Thin Films by Activated Reactive Evaporation Method
フルテキストURL 002_121_129.pdf
著者 藤原 貴| 藤井 達生| 難波 徳郎| 高田 潤| 三浦 嘉也|
抄録 Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM). The electrical conductivity of the films and the doping effect of Al ions were also investigated. XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and Al doping amount affect the c-axis orientation, the growth rate, the microstructure of the films and electrical conductivity. Optimum conditions with a fine texture of the surface and having good ctystallinity as well as good conductivity (≒10(-4)Ω・cm) were as follows : the substrate temperature; 200℃, the total evaporation rate; 1.0Å/s, the oxygen pressure; 2.0×10(-4) Torr, the r.f. power; 250W and the Al evaporation rare ratio; 2~6%. The films with 1.0×10(-3)Ω・cm were prepared at 50℃ for the substrate temperature.
キーワード ZnO film Al doped ZnO transparent conductive film r.f. activated reactive evaporation method
出版物タイトル 岡山大学環境理工学部研究報告
発行日 1997-01-10
2巻
1号
開始ページ 121
終了ページ 129
ISSN 1341-9099
言語 Japanese
論文のバージョン publisher
NAID 120002313550