start-ver=1.4
cd-journal=joma
no-vol=87
cd-vols=
no-issue=14
article-no=
start-page=
end-page=
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2005
dt-pub=200510
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Fabrication of C<sub>60</sub> field-effect transistors with polyimide and Ba<sub>0.4</sub>Sr<sub>0.6</sub>Ti<sub>0.96</sub>O<sub>3</sub> gate insulators
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=<p>Flexible C<sub>60</sub> field-effect transistor (FET) device has been fabricated with polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally-off FET properties are observed in this FET device. The field-effect mobility, ?, is estimated to be ~10<sup>-2</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> at 300 K. Furthermore, the C<sub>60</sub> FET has been fabricated with high dielectric Ba<sub>0.4</sub>Sr<sub>0.6</sub>Ti<sub>0.96</sub>O<sub>3</sub> (BST) gate insulator, showing n-channel properties; the ? value is estimated to be ~10<sup>-4</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C<sub>60</sub> FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.</p>
en-copyright=
kn-copyright=

en-aut-name=KubozonoYoshihiro
en-aut-sei=Kubozono
en-aut-mei=Yoshihiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=NaganoTakayuki
en-aut-sei=Nagano
en-aut-mei=Takayuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=HaruyamaYusuke
en-aut-sei=Haruyama
en-aut-mei=Yusuke
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=KuwaharaEiji
en-aut-sei=Kuwahara
en-aut-mei=Eiji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=TakayanagiToshio
en-aut-sei=Takayanagi
en-aut-mei=Toshio
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=OchiKenji
en-aut-sei=Ochi
en-aut-mei=Kenji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=FujiwaraAkihiko
en-aut-sei=Fujiwara
en-aut-mei=Akihiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

affil-num=1
en-affil=
kn-affil=Okayama University

affil-num=2
en-affil=
kn-affil=Okayama University

affil-num=3
en-affil=
kn-affil=Okayama University

affil-num=4
en-affil=
kn-affil=Okayama University

affil-num=5
en-affil=
kn-affil=Okayama University

affil-num=6
en-affil=
kn-affil=Okayama University

affil-num=7
en-affil=
kn-affil=Japan Advanced Institute of Science and Technology
en-keyword=fullerene devices
kn-keyword=fullerene devices
en-keyword=insulated gate field effect transistors
kn-keyword=insulated gate field effect transistors
en-keyword=polymers
kn-keyword=polymers
en-keyword=barium compounds
kn-keyword=barium compounds
en-keyword=strontium compounds
kn-keyword=strontium compounds
en-keyword=dielectric materials
kn-keyword=dielectric materials
END