Memoirs of the Faculty of Engineering, Okayama University 39巻 1号
2005-01 発行
門野 恵典
Graduate School of Natural Science and Technology, Okayama University
東辻 千枝子
Department of Electrical and Electronic Engineering, Faculty of Engineering, Okayama University
東辻 浩夫
Department of Electrical and Electronic Engineering, Faculty of Engineering, Okayama University
We present a real-space, polynomial-expansion approach to electron dynamics in nanostructured semiconductors. The Chebyshev expansion method is employed for efficient calculation of timeevolution of single-electron wave function. Details of the formulation are described. The method is applied to the electron transport in nanostructured semiconductors such as Si nanowires. The
mean-square displacement and diffusivity of electron in Si chains are obtained as functions of length of the chains. The results show clearly ballistic behavior of electron in the pure Si chain.
