ID | 34128 |
FullText URL | |
Author |
Nagano, Takayuki
Kuwahara, Eiji
Fujiwara, Akihiko
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Abstract | A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally-on type FET properties, where non-zero current was observed at gate-source voltage of 0 VGS, of 0V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current.Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap ≈0.3 eV. The field-effect mobility for this FET was 1.5 x 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices. |
Keywords | Field effect transistors
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Note | Document Objects Identifier:10.1016/j.cplett.2005.05.019
Published with permission from the copyright holder. This is the author's copy of the work, as published in Chemical Physics Letters, 30 June 2005, Volume 409, Issues 4-6, Pages 187-191. Publisher URL: http://dx.doi.org/10.1016/j.cplett.2005.05.019 Copyright 2005 Elsevier B.V. All rights reserved. |
Published Date | 2005-06-30
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Publication Title |
Chemical Physics Letters
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Volume | volume409
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Issue | issue4-6
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Publisher | Elsevier Science B.V.
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Start Page | 187
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End Page | 191
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ISSN | 0009-2614
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NCID | AA00602122
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Content Type |
Journal Article
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language |
English
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Copyright Holders | Elsevier B.V.
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File Version | author
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Refereed |
True
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DOI | |
Web of Science KeyUT | |
Submission Path | physics_general/6
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