| ID | 69337 |
| Author |
Takahashi, Yasushi
Okayama University
Asano, Takashi
Kyoto University
Noda, Susumu
Kyoto University
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| Abstract | By utilizing stimulated Raman scattering, it is possible to generate continuous-wave laser light in silicon, an indirect bandgap semiconductor. The first part of this chapter explains the mechanism of the Raman laser using a silicon resonator with a high-quality factor (Q). In the second part, the mechanism of the ultra-low threshold Raman silicon laser using a photonic crystal high-Q nanocavity is summarized, and recent advancements are explained.
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| Note | Topics in Applied Physics, volume 153
This is an Accepted Manuscript of a chapter published by Springer Nature Switzerland.
This fulltext file will be available in Jul. 2026.
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| Published Date | 2025-07-29
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| Publication Title |
Progress in Nanophotonics 8
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| Publisher | Springer Nature Switzerland
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| Start Page | 95
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| End Page | 143
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| ISSN | 0303-4216
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| Content Type |
Book
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| language |
English
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| OAI-PMH Set |
岡山大学
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| Copyright Holders | © 2025 The Author(s), under exclusive license to Springer Nature Switzerland AG
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| File Version | author
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| DOI | |
| Related Url | isVersionOf https://doi.org/10.1007/978-3-031-86647-0_4
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| Citation | Takahashi, Y., Asano, T., Noda, S. (2025). Low-Threshold Raman Silicon Lasers Using Photonic Crystal High-Q Nanocavities. In: Yatsui, T. (eds) Progress in Nanophotonics 8. Topics in Applied Physics, vol 153. Springer, Cham. https://doi.org/10.1007/978-3-031-86647-0_4
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