Acta Medica Okayama 89 8 2006 Output properties of C₆₀ field-effect transistor device with Eu source/drain electrodes 083511-1 083511-3 EN Yoshihiro Kubozono Kenji Ochi Takayuki Nagano Toshio Ohta Ryo Nouchi Yukitaka Matsuoka Eiji Shikoh Akihiko Fujiwara <p>Field-effect transistor (FET) device with thin films of C₆₀ has been fabricated with Eu electrodes exhibiting small work function. The C₆₀ FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm² V^?1 s^?1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C₆₀.</p> No potential conflict of interest relevant to this article was reported.