フルテキストURL fulltext.pdf
著者 Oshime, Norihiro| Kano, Jun| Ikenaga, Eiji| Yasui, Shintaro| Hamasaki, Yosuke| Yasuhara, Sou| Hinokuma, Satoshi| Ikeda, Naoshi| Janolin, Pierre-Eymeric| Kiat, Jean-Michel| Itoh, Mitsuru| Yokoya, Takayoshi| Fujii, Tatsuo| Yasui, Akira| Osawa, Hitoshi|
発行日 2020-07-01
出版物タイトル Scientific Reports
10巻
1号
出版者 Nature
開始ページ 10702
ISSN 2045-2322
資料タイプ 学術雑誌論文
言語 English
OAI-PMH Set 岡山大学
著作権者 © The Author(s) 2020
論文のバージョン publisher
PubMed ID 32612212
DOI 10.1038/s41598-020-67651-w
Web of Science KeyUT 000546550700016
関連URL isVersionOf https://doi.org/10.1038/s41598-020-67651-w
フルテキストURL SR9_1_8041.pdf
著者 Yoshioka, Yohsuke| Yamachika, Eiki| Nakanishi, Makoto| Ninomiya, Tadashi| Akashi, Sho| Kondo, Sei| Moritani, Norifumi| Kobayashi, Yasuhiro| Fujii, Tatsuo| Iida, Seiji|
発行日 2019-5-29
出版物タイトル Scientific Reports
9巻
出版者 Nature Publishing Group
開始ページ 8041
ISSN 2045-2322
資料タイプ 学術雑誌論文
言語 English
OAI-PMH Set 岡山大学
著作権者 © The Author(s) 2019
論文のバージョン publisher
PubMed ID 31142769
DOI 10.1038/s41598-019-44389-8
Web of Science KeyUT 000469319300003
関連URL isVersionOf https://doi.org/10.1038/s41598-019-44389-8
JaLCDOI 10.18926/15436
フルテキストURL Mem_Fac_Eng_OU_26_2_69.pdf
著者 Fujii, Tatsuo| Sakata Naoki| Nanba, Tokuro| Osaka, Akiyoshi| Miura, Yoshinari| Takada, Jun|
抄録 (001)-oriented Ti(2)O(3) films were epitaxially grown on a(001)-face of sapphire single-crystalline substrate by an activated reactive evaporation method. The formation ranges of stoichiometric and nonstoichiometric Ti(2)O(3) films were determined as a function of the substrate temperature (Ts), the oxygen pressure (Po(2)) and the deposition rate. Stoichiometric Ti(2)O(3) films were grown at Ts≧673K under Po(2)≧1.0×10(-4)Torr, which showed the metal-insulator transition with a sharp change in electrical resistivity from 3.5×10(-2) to 2.6×10(-3)Ωcm at 361K. Nonstoichiometric films prepared under less oxidized conditions did not exhibit the transition. The nonstoichiometry of the Ti(2)O(3)films was discussed in terms of excess Ti ions.
出版物タイトル Memoirs of the Faculty of Engineering, Okayama University
発行日 1992-03-28
26巻
2号
開始ページ 69
終了ページ 75
ISSN 0475-0071
言語 English
論文のバージョン publisher
NAID 120002307639
JaLCDOI 10.18926/14088
フルテキストURL Mem_Fac_Eng_OU_41_1_93.pdf
著者 Tarequl Islam Bhuiyan| 中西 真| 藤井 達生| 高田 潤|
抄録 Co-precipitation method has been employed to fabricate neodymium substituted hematite with different compositions from the aqueous solution of their corresponding metal salts. Thermal analysis and X-ray diffraction studies revealed the coexistence of Fe(2)O(3) and Nd(2)O(3) phases up to 1050℃ and formation of solid solution phase among them at 1100℃ and above temperatures, which was evidenced by shifting of the XRD peaks. Unit cell parameters and the cell volumes of the samples were found to increase by adding Nd(3+) ions in the reaction process. FESEM studies showed the suppression of particle growth due to the presence of Nd(3+) ions. Spectroscopic measurement evidenced that neodymium substituted hematite exhibited brighter yellowish red color tone than that of pure α-Fe(2)O(3).
出版物タイトル Memoirs of the Faculty of Engineering, Okayama University
発行日 2007-01
41巻
1号
開始ページ 93
終了ページ 98
ISSN 0475-0071
言語 English
論文のバージョン publisher
NAID 120002308163
JaLCDOI 10.18926/fest/11614
タイトル(別表記) Preparation and Properties of ZnO Transparent Conductive Thin Films by Activated Reactive Evaporation Method
フルテキストURL 002_121_129.pdf
著者 藤原 貴| 藤井 達生| 難波 徳郎| 高田 潤| 三浦 嘉也|
抄録 Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM). The electrical conductivity of the films and the doping effect of Al ions were also investigated. XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and Al doping amount affect the c-axis orientation, the growth rate, the microstructure of the films and electrical conductivity. Optimum conditions with a fine texture of the surface and having good ctystallinity as well as good conductivity (≒10(-4)Ω・cm) were as follows : the substrate temperature; 200℃, the total evaporation rate; 1.0Å/s, the oxygen pressure; 2.0×10(-4) Torr, the r.f. power; 250W and the Al evaporation rare ratio; 2~6%. The films with 1.0×10(-3)Ω・cm were prepared at 50℃ for the substrate temperature.
キーワード ZnO film Al doped ZnO transparent conductive film r.f. activated reactive evaporation method
出版物タイトル 岡山大学環境理工学部研究報告
発行日 1997-01-10
2巻
1号
開始ページ 121
終了ページ 129
ISSN 1341-9099
言語 Japanese
論文のバージョン publisher
NAID 120002313550