ID | 59908 |
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Author |
Akiba, Kazuto
Graduate School of Natural Science and Technology, Okayama University
Kobayashi, Kaya
Research Institute for Interdisciplinary Science, Okayama University
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Kobayashi, Tatsuo C.
Graduate School of Natural Science and Technology, Okayama University
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Koezuka, Ryo
The Institute for Solid State Physics, The University of Tokyo
Miyake, Atsushi
The Institute for Solid State Physics, The University of Tokyo
Gouchi, Jun
The Institute for Solid State Physics, The University of Tokyo
Uwatoko, Yoshiya
The Institute for Solid State Physics, The University of Tokyo
Tokunaga, Masashi
The Institute for Solid State Physics, The University of Tokyo
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Abstract | This study investigates the transport properties of a chiral elemental semiconductor tellurium (Te) under magnetic fields and pressure. Application of hydrostatic pressure reduces the resistivity of Te, while its temperature dependence remains semiconducting up to 4 GPa, contrary to recent theoretical and experimental studies. Application of higher pressure causes structural as well as semiconductor-metal transitions. The resulting metallic phase above 4 GPa exhibits superconductivity at 2 K along with a noticeable linear magnetoresistance effect. On the other hand, at ambient pressure, we identified metallic surface states on the as-cleaved (10¯10) surfaces of Te. The nature of these metallic surface states has been systematically studied by analyzing quantum oscillations observed in high magnetic fields. We clarify that a well-defined metallic surface state exists not only on chemically etched samples that were previously reported, but also on as-cleaved ones.
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Published Date | 2020-06-02
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Publication Title |
Physical Review B
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Volume | volume101
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Issue | issue24
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Publisher | American Physical Society
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Start Page | 245111
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ISSN | 2469-9950
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NCID | AA11187113
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Content Type |
Journal Article
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language |
英語
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OAI-PMH Set |
岡山大学
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Copyright Holders | ©2020 American Physical Society
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File Version | publisher
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DOI | |
Web of Science KeyUT | |
Related Url | isVersionOf https://doi.org/10.1103/PhysRevB.101.245111
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Funder Name |
Ministry of Education, Culture, Sports, Science and Technology
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助成番号 | 19K14660
19H01850
19H01852
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