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ID 34151
FullText URL
Author
Ochi, Kenji
Nagano, Takayuki
Ohta, Toshio
Nouchi, Ryo
Matsuoka, Yukitaka
Shikoh, Eiji
Fujiwara, Akihiko
Abstract

Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V?1 s?1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.

Keywords
device physics
C<sub>60</sub>
Eu electrodes
Note
Digital Object Identifier:10.1063/1.2337990
Published with permission from the copyright holder. This is the institute's copy, as published in Applied Physics Letters, 21 August 2006, 89, 083511, (3 Pages).
Publisher URL:http://dx.doi.org/10.1063/1.2337990
Copyright © 2006 American Institute of Physics. All rights reserved.
Published Date
2006-8
Publication Title
Applied Physics Letters
Volume
volume89
Issue
issue8
Start Page
083511-1
End Page
083511-3
Content Type
Journal Article
language
英語
Refereed
True
DOI
Submission Path
physics_general/1