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ID 48744
FullText URL
Author
Wakita, Takanori
Okazaki, Hiroyuki
Takano, Yoshihiko
Hirai, Masaaki
Muraoka, Yuji Kakenhi
Yokoya, Takayoshi ORCID Kakenhi
Abstract
The boron concentration dependence of the Si electronic structure of Si(100)2 × 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition.
Published Date
2010-12
Publication Title
Physica C-Superconductivity and its Applications
Volume
volume470
Issue
issueS1
Publisher
Elsevier
Start Page
S641
End Page
S643
ISSN
0921-4534
NCID
AA11461984
Content Type
Journal Article
Project
Research Center of New Functional Materials for Energy Production, Storage, and Transport
Official Url
http://www.sciencedirect.com/science/article/pii/S0921453409007448#
language
英語
Copyright Holders
Copyright © 2009 Elsevier B.V. All rights reserved.
File Version
author
Refereed
True
DOI
Web of Sience KeyUT