ID 15464
JaLCDOI
Sort Key
9
FullText URL
Author
Kawamura Haruyuki
Miura, Yoshinari
Abstract
Amorphous films of lead oxyfluorosilicate were prepared with a rf-sputtering technique, and the distribution profiles of the component elements and chemical states of the fluoride ions were analyzed with an X-ray photoelectron spectrometer. Si atoms with an expanded coordination, O(4)Si-F, were present near the surface, and O(3)Si-F units were present in the deeper part of the films. Electrical resistance indicated transition to a conduction state for the films containing fluoride ions, while the films were crystallized to precipitate low quartz by the irradiation of He-Ne laser of 3 mW up to 1 sec.
Publication Title
Memoirs of the Faculty of Engineering, Okayama University
Published Date
1994-03-15
Volume
volume28
Issue
issue2
Publisher
Faculty of Engineering, Okayama University
Publisher Alternative
岡山大学工学部
Start Page
77
End Page
84
ISSN
0475-0071
NCID
AA10699856
Content Type
Departmental Bulletin Paper
OAI-PMH Set
岡山大学
language
英語
File Version
publisher
NAID
Eprints Journal Name
mfe